Micro-structured atomic source system

ABSTRACT

A micro-structured atomic source system is described herein. One system includes a silicon substrate, a dielectric diaphragm, wherein the dielectric diaphragm includes a heater configured to heat an atomic source substance, an intermediary material comprising a chamber configured to receive the atomic source substance, and a guide material configured to direct a flux of atoms from the atomic source substance.

TECHNICAL FIELD

The present disclosure relates to a micro-structured atomic sourcesystem.

BACKGROUND

Atoms of various source materials may be needed for scientific testing.For example, a test may call for atoms of a certain metal to be directedto a target location. Typically, the atoms generated can be very high innumber and have little directional input. It can be difficult, however,to create and precisely direct a stream of atoms from a source materialinto a small target location.

Additionally, it can be difficult to provide multiple different sourcesof atoms of different species from a small area. For example, a test maycall for different atoms from multiple different source materials, suchas silver and iron. It can be advantageous to provide both sources ofatoms from the two different source materials from a small area, as thetest area itself may be small.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a micro-structured atomic source system, inaccordance with one or more embodiments of the present disclosure.

FIG. 2 illustrates a micro-structured atomic source system, inaccordance with one or more embodiments of the present disclosure.

FIG. 3 illustrates a micro-structured atomic source system with multiplechambers, in accordance with one or more embodiments of the presentdisclosure.

FIG. 4 illustrates a micro-structured atomic source system receiving anatomic source substance by a shadow mask, in accordance with one or moreembodiments of the present disclosure.

FIG. 5 illustrates a micro-structured atomic source system receiving anatomic source substance by a shadow mask, in accordance with one or moreembodiments of the present disclosure.

DETAILED DESCRIPTION

A micro-structured atomic source system is described herein. Forexample, one or more embodiments include a silicon substrate, adielectric diaphragm, wherein the dielectric diaphragm includes a heaterconfigured to heat an atomic source substance, an intermediary materialcomprising a chamber configured to receive the atomic source substance,and a guide material configured to direct a flux of atoms from theatomic source substance.

A micro-structured atomic source system, in accordance with the presentdisclosure, can generate atoms and more precisely direct a stream ofatoms towards a target location. For example, iron atoms used for ascientific test can be generated and precisely directed to a testinglocation. Additionally, the micro-structured atomic source system cangenerate atoms from multiple different source materials, and direct theatoms accordingly.

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof. The drawings show by wayof illustration how one or more embodiments of the disclosure may bepracticed.

These embodiments are described in sufficient detail to enable those ofordinary skill in the art to practice one or more embodiments of thisdisclosure. It is to be understood that other embodiments may beutilized and that process, electrical, and/or structural changes may bemade without departing from the scope of the present disclosure.

As will be appreciated, elements shown in the various embodiments hereincan be added, exchanged, combined, and/or eliminated so as to provide anumber of additional embodiments of the present disclosure. Theproportion and the relative scale of the elements provided in thefigures are intended to illustrate the embodiments of the presentdisclosure, and should not be taken in a limiting sense.

Directional terms such as “horizontal” and “vertical” are used withreference to the component orientation depicted in FIG. 1. These termsare used for example purposes only and are not intended to limit thescope of the appended claims.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 104 may referenceelement “04” in FIG. 1, and a similar element may be reference as 204 inFIG. 2.

As used herein, “a” or “a number of” something can refer to one or moresuch things. For example, “a number of temperature sensors” can refer toone or more temperature sensors.

FIG. 1 illustrates a micro-structured atomic source system 100, inaccordance with one or more embodiments of the present disclosure. Asshown in FIG. 1, the micro-structured atomic source system 100 includesa silicon substrate 102, a dielectric diaphragm 104, an intermediarymaterial 106 comprising a chamber 105 configured to receive an atomicsource substance 112, and a guide material 108 configured to direct aflux of atoms from atomic source substance 112.

Intermediary material 106, as shown in FIG. 1, can be a materialcomprising a chamber 105 configured to receive an atomic sourcesubstance 112. Intermediary material 106 can be an oxide material. Forexample, intermediary material 106 can be silicon dioxide.

Chamber 105 can be a cavity within intermediary material 106. Forexample, chamber 105 can be a cavity that can have dimensions such thatthe cavity is adjacent to guide material 108 and dielectric diaphragm104, as illustrated in FIG. 1.

Atomic source substance 112 can be any material placed within chamber105 that can generate atoms when heated, as will be further describedherein. For example, atomic source substance 112 can be a material suchas iron that when placed in chamber 105 and heated, will generate a fluxof atoms. As an additional example, atomic source substance 112 can be amaterial such as silver that when heated, will generate a flux of atoms.

Chamber 105 can be created by etching intermediary material 106. As usedherein, etching is a process used in microfabrication to chemicallyremove layers from the surface of a material (e.g., intermediarymaterial 106). For example, intermediary material 106 can be etched tocreate chamber 105.

In some embodiments, chamber 105 can be created using an isotropic wetetch. For example, using an isotropic wet etch can allow for an etchantsubstance to etch intermediary material 106 in a horizontal as well asvertical direction simultaneously to create chamber 105.

In some embodiments, chamber 105 can be created using a combination ofdry etching and wet etching. For example, using a dry etching techniquecan allow for etching of intermediary material 106 in a verticaldirection, and subsequently using a wet etching technique can allow foretching of intermediary material 106 in a horizontal direction.

Although not shown in FIG. 1, dielectric diaphragm 104 can include aplurality of materials. For example, one material of dielectricdiaphragm 104 can be a dielectric material (e.g., silicon nitride). Asecond material of dielectric diaphragm 104 can be a metal material thatincludes a heater 110 and a number of temperature sensors. Heater 110can be a metal resistive heater with a well-controlled temperaturecoefficient of resistance. For example, heater 110 of dielectricdiaphragm 104 can be platinum, a nickel/iron alloy, or any othersuitable material with a well-controlled temperature coefficient ofresistance. The third material of dielectric diaphragm 104 can beanother dielectric material (e.g., silicon nitride).

Although the materials comprising dielectric diaphragm 104 are describedas including materials such as silicon nitride, platinum, or anickel/iron alloy, embodiments of the present disclosure are not solimited. For example, the materials comprising dielectric diaphragm 104can include any other suitable material.

Heater 110 can be configured to heat atomic source substance 112, aswill be further described herein. Heater 110 can be a metal resistiveheater that converts electricity into heat through resistive heating.For example, electric current can be passed through a heating element ofheater 110, and the resistance encountered by the current in the heatingelement can generate heat.

Although not shown in FIG. 1, dielectric diaphragm 104 can include anumber of temperature sensors that can determine the temperature ofheater 110. Temperature sensors can include thermistors, thermocouples,resistance thermometers, or any other suitable type of temperaturesensor. The temperature of heater 110 can be controlled in order tocontrol the flux of atoms generated from atomic source substance 112, aswill be further described herein. Additionally, the temperature ofheater 110 can be controlled to prevent the temperature of heater 110from becoming too hot and expelling the flux of atoms too quickly.

As shown in FIG. 1, dielectric diaphragm 104 can be adjacent tointermediary material 106. For example, dielectric diaphragm 104 can belocated directly adjacent to intermediary material 106 such that heater110 can be adjacent to chamber 105.

Atomic source substance 112 can be located adjacent to heater 110. Forexample, atomic source substance 112 can be located in chamber 105 suchthat atomic source substance 112 can be located adjacent to dielectricdiaphragm 104 comprising heater 110.

In the example shown in FIG. 1, atomic source substance 112 can be athin-film substance. For example, atomic source substance 112 can be athin-film when deposited in chamber 105, as will be further describedherein (e.g., in connection with FIGS. 4 and 5). Atomic source substance112 can comprise small granules or powder such that when atomic sourcesubstance 112 is deposited in chamber 105 it forms a thin film adjacentto heater 110.

In some embodiments, the thin film of atomic source substance 112 canadhere to the surface of dielectric diaphragm 104. For example, atomicsource substance 112 can adhere (e.g., stick) to the surface ofdielectric diaphragm 104 when atomic source substance 112 is heated byheater 110. Adhesion to the surface of dielectric diaphragm 104 byatomic source substance 112 can be beneficial when micro-structuredatomic source system 100 is placed in certain orientations (e.g.,micro-structured atomic source system 100 is not in a horizontalorientation as shown in FIG. 1).

Heater 110 can be configured to sublimate atomic source substance 112.As used herein, sublimation refers to a phase transition of a substancedirectly from a solid phase to a gas phase without passing through anintermediate liquid phase. For example, heater 110 can heat atomicsource substance 112 so that atomic source substance 112 sublimates froma solid to a gas. As a result of the sublimation of atomic sourcesubstance 112, a flux of atoms can be generated from atomic sourcesubstance 112.

As shown in FIG. 1, a guide material 108 can be configured to direct aflux of atoms from atomic source substance 112. Guide material 108 canbe any material that is compatible with the manufacturing process ofmicro-structured atomic source system 100. For example, guide material108 can be any material (e.g., metal) compatible with the etchingprocesses of intermediary material 106 and silicon substrate 102, aswill be further described herein. That is, guide material 108 can be ametal (e.g., gold) compatible with the manufacturing process ofmicro-structured atomic source system 100.

Guide material 108 can be adjacent to intermediary material 106 and havean opening 107 to direct the flux of atoms from atomic source substance112. For example, opening 107 can direct the flux of atoms resultingfrom sublimation of atomic source substance 112. That is, opening 107can be selected to direct the flux of atoms from atomic source substance112 in a directional manner.

In some embodiments, opening 107 can be formed by etching guide material108. For example, opening 107 can be etched using a wet etch process.However, embodiments of the present disclosure are not so limited. Forexample, opening 107 can be etched using any suitable etching process.

In some embodiments, opening 107 can be formed using an ion millingtechnique. As used herein, ion milling is a process used inmicrofabrication to remove layers from the surface of a material (e.g.,guide material 108) by firing ions at the surface from an angle andsputtering material from the surface of the material. For example, guidematerial 108 can be ion milled to form opening 107.

The dimensions (e.g., size) of opening 107 in guide material 108 can beselected to direct the flux of atoms from atomic source substance 112.For example, the dimensions of opening 107 can be selected based on thetarget the flux of atoms from atomic source substance 112 is intended tobe directed towards. That is, the dimensions of opening 107 can beselected to direct the flux of atoms from atomic source substance 112 ina specified direction.

Silicon substrate 102, in the example shown in FIG. 1, can be a basematerial upon which micro-structured atomic source system 100 isconstructed. Silicon substrate 102 can be a substrate made from silicon.

Silicon substrate 102 can be adjacent to dielectric diaphragm 104 andinclude a channel 103. For example, silicon substrate 102 can be locateddirectly adjacent to dielectric diaphragm 104.

Channel 103 can be formed by etching silicon substrate 102. For example,channel 103 can be formed by using an anisotropic wet etching techniqueto create sidewalls with a slope, as shown in FIG. 1.

Although sidewalls of channel 103 are shown in FIG. 1 as having a slope,embodiments of the present disclosure are not so limited. For example,channel 103 can be formed using a deep reactive ion etching (DRIE)anisotropic etch technique resulting in sidewalls that have less of aslope (e.g., vertical) than sidewalls resulting from using ananisotropic etch. As an additional example, channel 103 can be etched tocreate sidewalls that are perpendicular to dielectric diaphragm 104.

Channel 103 can be configured to thermally isolate dielectric diaphragm104. For example, dielectric diaphragm 104 can be thermally isolated byremoving material (e.g., etching) in silicon substrate 102. That is,material is removed from silicon substrate 102 so that heater 110directs heat primarily to atomic source substance 112.

Thermally isolating dielectric diaphragm 104 can increase the efficiencyof the micro-structured atomic source system 100. For example, thermallyisolating dielectric diaphragm 104 can ensure heat given off by heater110 is primarily directed towards atomic source substance 112 ratherthan the surrounding materials of system 100 (e.g., silicon substrate102, intermediary material 106).

The operation of micro-structured atomic source system 100 can includereceiving, in chamber 105 located in intermediary material 106, atomicsource substance 112, heating, via heater 110 located in dielectricdiaphragm 104, atomic source substance 112 such that atomic sourcesubstance 112 sublimates to produce a flux of atoms, and directing viaopening 107 in guide material 108, the flux of atoms.

In some embodiments, operation of micro-structured atomic source system100 can take place under vacuum conditions. For example, atomic sourcesubstance 112 can be heated to sublimate to produce a flux of atomsunder a vacuum. However, embodiments of the present disclosure are notso limited. For example, operation of micro-structured atomic sourcesystem 100 can take place under partial vacuum conditions or underatmospheric conditions.

The flux of atoms can be controlled by controlling a current supplied toheater 110. That is, the quantity of the stream of atoms can becontrolled by current supplied to heater 110. For example, a current(e.g., 100 milliamps) can be supplied to heater 110 to produce a flux ofatoms from atomic source substance 112. A larger current (e.g., 200milliamps) can be supplied to heater 110 to produce a larger flux ofatoms from atomic source substance 112.

FIG. 2 illustrates a micro-structured atomic source system 200, inaccordance with one or more embodiments of the present disclosure. Asshown in FIG. 2, the micro-structured atomic source system 200 includesa silicon substrate 202, a dielectric diaphragm 204, an intermediarymaterial 206 comprising a chamber 205 configured to receive an atomicsource substance 214, and a guide material 208 configured to direct aflux of atoms from atomic source substance 214. The silicon substrate,dielectric diaphragm, intermediary material, chamber, and guide layercan be analogous to those described in connection with FIG. 1.

In the example shown in FIG. 2, atomic source substance 214 can be abulk substance. For example, atomic source substance 214 can be a bulksubstance when deposited in chamber 205, as will be further describedherein (e.g., in connection with FIGS. 4 and 5). Atomic source substance214 can comprise larger granules such that when atomic source substance214 is deposited in chamber 205 it is forms a bulk mass adjacent toheater 210.

FIG. 3 illustrates a micro-structured atomic source system 316 withmultiple chambers, in accordance with one or more embodiments of thepresent disclosure. As shown in FIG. 3, the micro-structured atomicsource system 316 can include a silicon substrate 302, a dielectricdiaphragm 304, an intermediary material 306, and a guide material 308.

Intermediary material 306 can comprise a plurality of chambers, eachconfigured to receive a different atomic source substance. For example,as shown in FIG. 3, intermediary material 306 can comprise a firstchamber 305-1 configured to receive an atomic source substance 314-1,and a second chamber 305-2 configured to receive an atomic sourcesubstance 314-2. Intermediary material 306 can be located adjacent tosilicon substrate 302 and dielectric diaphragm 304.

Although atomic source substances 314-1 and 314-2 are shown FIG. 3 asthin films, embodiments of the present disclosure are not so limited.For example, atomic source substances 314-1 and 314-2 can be bulksubstances (e.g., a bulk substance as described in connection with FIG.2).

Silicon substrate 302 can comprise one or more channels. For example, asshown in FIG. 3, silicon substrate 302 can comprise a first channel303-1 and a second channel 303-2. Each of first channel 303-1 and secondchannel 303-2 can thermally isolate dielectric diaphragm 304. Forexample, first channel 303-1 can thermally isolate a first heater 310-1located in dielectric diaphragm 304 adjacent first channel 303-1, andsecond channel 303-2 can thermally isolate a second heater 310-2 locatedin dielectric diaphragm 304 adjacent second channel 303-2.

Dielectric diaphragm 304 can be located adjacent to silicon substrate302 and intermediary material 306 and can include a plurality ofheaters, each configured to heat the atomic source substance locatedadjacent to that respective heater. As shown in FIG. 3, electricdiaphragm 304 can include first heater 310-1 configured to heat atomicsource substance 314-1 and second heater 310-2 configured to heat atomicsource substance 314-2. Heaters 310-1 and 310-2 can be metal resistiveheaters with a well-controlled temperature coefficient of resistance.For example, heaters 310-1 and 310-2 of dielectric diaphragm 304 can beplatinum, a nickel/iron alloy, or any other suitable material with awell-controlled temperature coefficient of resistance.

Although not shown in FIG. 3, dielectric diaphragm 304 can include anumber of temperature sensors that can determine the respectivetemperatures of heaters 310-1 and 310-2. Temperature sensors can includethermistors, thermocouples, resistance thermometers, or any othersuitable type of temperature sensor. The respective temperatures ofheaters 310-1 and 310-2 can be controlled in order to control the fluxof atoms generated from respective atomic source substances 314-1 and314-2.

Guide material 308 can comprise a plurality of openings, each configuredto direct a flux of atoms from a different one of the atomic sourcesubstances. For example, as shown in FIG. 3, guide material 308 cancomprise a first opening 307-1 configured to direct a flux of atoms fromatomic source substance 314-1, and a second opening 307-2 configured todirect a flux of atoms from atomic source substance 314-2.

The dimensions (e.g., size) of first opening 307-1 and second opening307-2 can be selected to direct the flux of atoms from atomic sourcesubstances 314-1 and 314-2, respectively. For example, the dimensions offirst opening 307-1 and second opening 307-2 can be selected based onthe target the flux of atoms from atomic source substances 314-1 and314-2 are intended to be directed towards. That is, the dimensions offirst opening 307-1 and second opening 307-2 can be selected to directthe flux of atoms from atomic source substances 314-1 and 314-2 in aspecified direction. As an additional example, the dimensions of firstopening 307-1 and second opening 307-2 can be selected to direct theflux of atoms from atomic source substance 314-1 in one direction, andthe flux of atoms from atomic source substance 314-2 in a differentdirection.

Different ones of the plurality of atomic source substances can belocated in different ones of the respective one or more chambers. Forexample, as shown in FIG. 3, atomic source substance 314-1 (e.g., iron)can be an atomic source substance that is different from atomic sourcesubstance 314-2 (e.g., silver). Atomic source substance 314-1 can belocated in first chamber 305-1, and atomic source substance 314-2 can belocated in second chamber 305-2.

In some embodiments, the heaters can be operated independently. Forexample, first heater 310-1 can be operated independently from secondheater 310-2. That is, first heater 310-1 can receive a current that canbe different than the current received at second heater 310-2. As aresult, the magnitude of the flux of atoms from atomic source substance314-1 can be different than the magnitude of the flux of atoms fromatomic source substance 314-2.

In some embodiments, the heaters can be operated simultaneously. Forexample, first heater 310-1 can be operated simultaneously with secondheater 310-2. That is, first heater 310-1 and second heater 310-2 can beoperated to simultaneously produce a flux of atoms from atomic sourcesubstance 314-1 and a flux of atoms from atomic source substance 314-2.

Although micro-structured atomic source system 316 is shown in FIG. 3 asincluding two linear chambers for producing a flux of atoms from twoatomic source substances, embodiments of the present disclosure are notso limited. For example, micro-structured atomic source system 316 cancomprise any size of array of chambers for producing a correspondingnumber of fluxes of atoms. That is, system 316 can include an array(e.g., 2 x 2, 4 x 4, 5 x 2, 4 x 7, etc. . . . ) of chambers configuredto receive a corresponding number of atomic source substances with acorresponding number of heaters to sublimate the number of atomic sourcesubstances to produce a corresponding number of fluxes of atoms.

FIG. 4 illustrates a micro-structured atomic source system 418 receivingan atomic source substance 420 by a shadow mask 422, in accordance withone or more embodiments of the present disclosure. As shown in FIG. 4,the micro-structured atomic source system 418 can include a siliconsubstrate 402, a dielectric diaphragm 404, an intermediary material 406,and a guide material 408.

Shadow mask 422 can be a planar material that includes a number ofopenings to allow atomic source substances (e.g., atomic sourcesubstance 420) to pass through shadow mask 422. The number of openingsin shadow mask 422 can be etched (e.g., DRIE etch techniques oranisotropic wet etch techniques).

Shadow mask 422 can be positioned over micro-structured atomic sourcesystem 418 such that the number of openings of shadow mask 422 arealigned with the number of openings of guide material 408 correspondingto the number of chambers that are to receive atomic source substance420.

Atomic source substance 420 can be received by a first chamber 405-1 viaan opening in shadow mask 422. For example, after an opening of shadowmask 422 is aligned with an opening (e.g., first opening 307-1 asdescribed in connection with FIG. 3) of guide material 408, atomicsource substance 420 can be deposited on shadow mask 422, resulting inatomic source substance 420 being deposited in first chamber 405-1 bypassing through shadow mask 422 and falling into first chamber 405-1.The remaining amount of atomic source substance 420 is deposited on asurface of shadow mask 422. No amount of atomic source substance 420 isdeposited in a chamber (e.g., chamber 405-2) not intended to receiveatomic source substance 420.

Although described as one atomic source substance 420 being deposited inone chamber through one opening of shadow mask 422, embodiments of thepresent disclosure are not so limited. For example, atomic sourcesubstance 420 can be deposited in more than one chamber through morethan one opening of shadow mask 422 where the openings of the guidematerial corresponding to the respective chamber and the respectiveopenings of the shadow mask are in alignment.

FIG. 5 illustrates a micro-structured atomic source system 518 receivingan atomic source substance 524 by a shadow mask 526, in accordance withone or more embodiments of the present disclosure. As shown in FIG. 5,the micro-structured atomic source system 518 can include a siliconsubstrate 502, a dielectric diaphragm 504, an intermediary material 506,and a guide material 508.

Shadow mask 526 can be a planar material that includes a number ofopenings to allow material (e.g., atomic source substance 524) to passthrough shadow mask 526. Similar to the shadow mask described inconnection with FIG. 4 (e.g., shadow mask 422), the number of openingsin shadow mask 526 can be etched.

Shadow mask 526 can be positioned over micro-structured atomic sourcesystem 518 such that the number of openings of shadow mask 526 arealigned with the number of openings of guide material 508 correspondingto the number of chambers that are to receive atomic source substance524.

Atomic source substance 524 can be received by a second chamber 505-2via shadow mask 526. For example, after an opening of shadow mask 526 isaligned with an opening (e.g., second opening 307-2 as described inconnection with FIG. 3) of guide material 508, atomic source substance524 can be deposited on shadow mask 526, resulting in atomic sourcesubstance 524 being deposited in second chamber 505-2 by passing throughshadow mask 526 and falling into second chamber 505-2. The remainingamount of atomic source substance 524 is deposited on a surface ofshadow mask 526. No amount of atomic source substance 524 is depositedin a chamber (e.g., chamber 505-1) not intended to receive atomic sourcesubstance 524.

First chamber 505-1 can include an atomic source substance 520 (e.g.,atomic source substance 420 as described in connection with FIG. 4) thathas been previously received in first chamber 505-1. No amount of atomicsource substance 524 is received in first chamber 505-1.

Although described as one atomic source substance 524 being deposited inone chamber through one opening of shadow mask 526, embodiments of thepresent disclosure are not so limited. For example, atomic sourcesubstance 524 can be deposited in more than one chamber through morethan one opening of shadow mask 526 where the openings of the guidematerial corresponding to the respective chamber and the respectiveopenings of the shadow mask are in alignment.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anyarrangement calculated to achieve the same techniques can be substitutedfor the specific embodiments shown. This disclosure is intended to coverany and all adaptations or variations of various embodiments of thedisclosure.

It is to be understood that the above description has been made in anillustrative fashion, and not a restrictive one. Combination of theabove embodiments, and other embodiments not specifically describedherein will be apparent to those of skill in the art upon reviewing theabove description.

The scope of the various embodiments of the disclosure includes anyother applications in which the above structures and methods are used.Therefore, the scope of various embodiments of the disclosure should bedetermined with reference to the appended claims, along with the fullrange of equivalents to which such claims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in example embodiments illustrated in the figures for thepurpose of streamlining the disclosure. This method of disclosure is notto be interpreted as reflecting an intention that the embodiments of thedisclosure require more features than are expressly recited in eachclaim.

Rather, as the following claims reflect, inventive subject matter liesin less than all features of a single disclosed embodiment. Thus, thefollowing claims are hereby incorporated into the Detailed Description,with each claim standing on its own as a separate embodiment.

What is claimed:
 1. A micro-structured atomic source system, comprising:a silicon substrate; a dielectric diaphragm, wherein the dielectricdiaphragm includes a heater configured to heat an atomic sourcesubstance; an intermediary material comprising a chamber with an openingconfigured to receive the atomic source substance; and a guide materialpartially covering the opening of the chamber, the guide materialconfigured to direct a flux of atoms from the atomic source substance.2. The micro-structured atomic source system of claim 1, wherein theheater is configured to sublimate the atomic source substance.
 3. Themicro-structured atomic source system of claim 1, wherein the atomicsource substance is adjacent to the heater.
 4. The micro-structuredatomic source system of claim 1, wherein the atomic source substance isa thin-film substance.
 5. The micro-structured atomic source system ofclaim 1, wherein the atomic source substance is a granular substance. 6.The micro-structured atomic source system of claim 1, wherein thesilicon substrate is adjacent to the dielectric diaphragm.
 7. Themicro-structured atomic source system of claim 1, wherein the siliconsubstrate includes a channel.
 8. The micro-structured atomic sourcesystem of claim 7, wherein the channel is configured to thermallyisolate the dielectric diaphragm.
 9. The micro-structured atomic sourcesystem of claim 1, wherein the dielectric diaphragm further includes anumber of temperature sensors.
 10. The micro-structured atomic sourcesystem of claim 1, wherein the dielectric diaphragm is adjacent to theintermediary material.
 11. The micro-structured atomic source system ofclaim 1, wherein the guide material is adjacent to the intermediarymaterial and includes an opening configured to direct the flux of atomsfrom the atomic source substance.
 12. The micro-structured atomic sourcesystem of claim 11, wherein a dimension of the opening of the guidematerial is selected to direct the flux of atoms from the atomic sourcesub stance.
 13. The micro-structured atomic source system of claim 1,wherein a quantity of the atoms is controlled by current supplied to theheater.
 14. A method for operating a micro-structured atomic sourcesystem, comprising: receiving, through an opening in a chamber locatedin an intermediary material, an atomic source substance; heating, via aheater located in a dielectric diaphragm, the atomic source substancesuch that the atomic source substance sublimates to produce a flux ofatoms; and directing, via an opening located in a guide materialpartially covering the opening of the chamber, the flux of atoms. 15.The method of claim 14, wherein the method includes controlling the fluxof atoms by controlling a current supplied to the heater.
 16. The methodof claim 14, wherein the method includes receiving the atomic sourcesubstance by the chamber via a shadow mask.
 17. A micro-structuredatomic source system, comprising: a silicon substrate comprising one ormore channels; a dielectric diaphragm located adjacent to the siliconsubstrate, wherein the dielectric diaphragm includes a plurality ofheaters each configured to heat a different one of a plurality of atomicsource substances, wherein each different atomic source substance islocated adjacent to its respective heater; an intermediary materiallocated adjacent to the silicon substrate and the dielectric diaphragm,comprising a plurality of chambers each including an opening, whereineach of the plurality of chambers are configured to receive a differentone of the atomic source substances; and a guide material locatedadjacent to the intermediary material, comprising a plurality ofopenings each configured to direct a flux of atoms from a different oneof the atomic source substances, wherein the guide material partiallycovers each of the plurality of openings of each of the plurality ofchambers.
 18. The micro-structured atomic source system of claim 17,wherein different ones of the plurality of atomic source substances arelocated in different chambers.
 19. The micro-structured atomic sourcesystem of claim 17, wherein the plurality of heaters are operatedindependently.
 20. The micro-structured atomic source system of claim17, wherein the plurality of heaters are operated simultaneously.